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NTD6415ANL, NVD6415ANL
N-Channel Power MOSFET
100 V, 23 A, 56 m W , Logic
Level
Features
? Low R DS(on)
? 100% Avalanche Tested
? AEC ? Q101 Qualified
? AEC Q101 Qualified ? NVD6415ANL
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
56 m W @ 4.5 V
52 m W @ 10 V
I D MAX
23 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
100
$ 20
Unit
V
V
D
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
23
16
83
A
W
G
S
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
Source Current (Body Diode)
I DM
T J , T stg
I S
80
? 55 to
+175
23
A
° C
A
1 2
3
4
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc, I L(pk) =
23 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) ? Steady State
Junction ? to ? Ambient ? Steady State (Note 1)
E AS
T L
Symbol
R q JC
R q JA
79
260
Max
1.8
39
mJ
° C
Unit
° C/W
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
2
Drain
3
Source
6415ANL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTD6415ANL/D
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